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HUFA76423S3S

Part No HUFA76423S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 35A TO-263AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1060pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044284-HUFA76423S3S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA76423S3S CAD Model

Description

The 1044284-HUFA76423S3S is a MOSFET with an N-Channel polarity manufactured by Fairchild/ON Semiconductor.

  • Mounting: SMD (SMT)
  • Package: D2PAK (TO-263AB)
  • Power Dissipation: 85W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 35A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 34nC @ 10V
  • Maximum Input Capacitance: 1060pF @ 25V
  • Maximum Rds On: 30 mOhm @ 35A, 10V
  • Supply and Demand: Sufficient

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