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Same model may have multiple batches, images only for reference.
ISL9N308AD3 Real Image
Same model may have multiple batches, images only for reference.

ISL9N308AD3

Part No ISL9N308AD3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 15 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875957-ISL9N308AD3
Ultra Librarian 3D Model Ultra Librarian ISL9N308AD3 CAD Model

Description

The ISL9N308AD3 is a N-Channel MOSFET transistor designed for discrete semiconductor applications.

  • Drain-to-Source Voltage: 30 V
  • Continuous Drain Current: 50A @ 25°C
  • Features: a low on-resistance and a high gate charge
  • Suitable for: high-power applications
  • Mounting: through-hole mounting
  • Package: TO-251-3 Short Leads package
  • Temperature Range: wide temperature range
  • Product Status: obsolete product from Fairchild/ON Semiconductor

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