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Same model may have multiple batches, images only for reference.
KSH112GTM Real Image
Same model may have multiple batches, images only for reference.

KSH112GTM

Part No KSH112GTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 100V 2A DPAK
Datasheet
KSH112GTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Darlington
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 3V @ 40mA, 4A
Collector Cut-off Current(Max) 20μA
Typical Gain (hFE) (Min) 1000 @ 2A, 3V
Maximum Power Dissipation 1.75W
Frequency - Transition 25MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Win Source Part Number 002173-KSH112GTM
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Automotive, Signal Processing
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian KSH112GTM CAD Model

Description

The KSH112GTM is a NPN Darlington transistor from Fairchild/ON Semiconductor that is designed for use in discrete semiconductor products.

  • Maximum Current Collector: 2A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
  • Collector Cut-Off Current: 20μA
  • Typical Gain (hFE): 1000 @ 2A, 3V
  • Maximum Power Dissipation: 1.75W
  • Package: D-Pak case
  • Frequency-Transition: 25MHz
  • Maximum Vce (sat): 3V @ 40mA, 4A
  • Status: obsolete(EOL)
  • Popularity: medium
  • Supply and Demand Status: limited
  • Applications: industrial, power management, automotive, and signal processing
  • Quantity per Package: 2,500

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