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Same model may have multiple batches, images only for reference.
KSP27TA Real Image
Same model may have multiple batches, images only for reference.

KSP27TA

Part No KSP27TA
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 60V 0.5A TO92-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V
Power - Max 625 mW
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Standard Package 1,890 pcs
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 876454-KSP27TA
Ultra Librarian 3D Model Ultra Librarian KSP27TA CAD Model

Description

The 876454-KSP27TA is a bipolar transistor belonging to the Single Bipolar Transistors category.

  • Manufacturer: Fairchild/ON Semiconductor
  • Transistor Type: NPN Darlington
  • Power Dissipation: 625 mW
  • Collector-Emitter Breakdown Voltage: 60V
  • Collector Current: 500 mA
  • Vce Saturation: 1.5V @ 100µA and 100mA
  • Current Cutoff: 100nA (ICBO)
  • DC Current Gain (hFE): 10000 @ 100mA and 5V
  • Mounting: Through-hole
  • Package: TO-226-3, TO-92-3 (TO-226AA) formed leads
  • Operating Temperature: Up to 150°C (TJ)
  • ECCN: EAR99
  • HTSUS: 8541.21.0095
  • Product Status: Obsolete

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