The MMBTA28 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor (now part of ON Semiconductor). It is designed for high-voltage switching and amplification applications. Its high breakdown voltage makes it suitable for driving relays, solenoids, and other inductive loads.

Applications

• High-Voltage Switching
• Relay Driving
• Solenoid Driving
• Lamp Driving
• High-Voltage Amplification

Features

• NPN Transistor: Suitable for applications requiring an NPN device.
• High Breakdown Voltage: Collector-Emitter Breakdown Voltage (VCEO) = 80V
• High Current Gain: Ensures efficient amplification and switching.
• Small Signal Amplifier: Provides a good gain-bandwidth product.
• Surface Mount Package: SOT-23 package for compact designs.

Benefits

• Improved Circuit Performance: High breakdown voltage and current gain enhance circuit performance.
• Simplified Design: Suitable for a wide range of high-voltage applications, simplifying circuit design.
• Space Saving: Small SOT-23 package saves board space.

The MMBTA28 features a collector-emitter voltage (VCEO) of 80V, a collector current (IC) of 0.5A, and a power dissipation (PD) of 350mW. Its high breakdown voltage and low saturation voltage make it a reliable choice for various high-voltage switching and amplification applications. The SOT-23 package allows for easy surface mounting and integration into compact electronic designs.