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SSS7N80A

Part No SSS7N80A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1096334-SSS7N80A
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SSS7N80A CAD Model

Description

The SSS7N80A is a high-voltage N-channel MOSFET from Fairchild/ON Semiconductor, designed for efficient power switching applications. It features a high breakdown voltage, low on-resistance, and fast switching speed, making it well-suited for use in power supplies, motor drives, and lighting systems. This device aims for optimal performance in demanding environments.

Applications

  • Switch Mode Power Supplies (SMPS).
  • Power Factor Correction (PFC).
  • DC-DC Converters.
  • Motor Control.
  • Electronic Lighting Ballasts.

Features

  • Voltage Rating: 800V
  • Continuous Drain Current: 7A
  • On-Resistance (RDS(on)): 1.7 Ohms (typical)
  • Gate Threshold Voltage: 2V to 4V
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220
  • Fast Switching Speed: Reduces power loss during switching.
  • Avalanche Ruggedness: Withstands high energy pulses.

Benefits

  • High Efficiency: Low RDS(on) minimizes conduction losses, increasing efficiency.
  • High Voltage Operation: Suitable for high voltage applications.
  • Fast Switching: Improves system performance by reducing switching losses.
  • Robustness: Avalanche ruggedness enhances reliability in harsh environments.
  • Easy Thermal Management: The TO-220 package facilitates efficient heat dissipation.

Additional Details

The SSS7N80A uses advanced planar technology for enhanced performance. This MOSFET is RoHS compliant and lead-free. Its optimized gate charge reduces switching losses, contributing to higher efficiency. The TO-220 package simplifies mounting and provides effective heat dissipation. It is well-suited for applications where inductive loads are present due to its high avalanche energy capability. Designers should consider using appropriate gate drive circuitry to optimize the switching performance. Designed to provide high reliability and performance in various power electronics applications.

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