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20N06

Name: 20N06
Brand: Goford Semiconductor
SKU: 540282
Availability: InStock
Rating: 4.93 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	20N06
Manufacturer	Goford Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	N60V,25A,RD<24M@10V,VTH1.0V~2.5V
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Goford Semiconductor
Package	Tape & Reel
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1609 pF @ 30 V
Power Dissipation (Max)	41W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package	2,500 pcs
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Win Source Part Number	540282-20N06
Ultra Librarian 3D Model	Ultra Librarian 20N06 CAD Model

Alternative Products

Description

The 540282-20N06 is a N-Channel MOSFET transistor from Goford Semiconductor.

Design: applications that require a high voltage N-Channel MOSFET
Drain to Source Voltage (Vdss): 60 V
Continuous Drain Current (Id): 25A @ 25°C
Rds On (Max): 24mOhm @ 20A and 10V
Gate Charge (Qg): 25 nC @ 10V
Input Capacitance (Ciss): 1609 pF @ 30V
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: surface mount applications
Operating Temperature: -55°C to 150°C
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package: tape & reel package containing 2,500 pieces

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