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G2003A

Part No G2003A
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N190V, 3A,RD<540M@10V,VTH1.0V~3.
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Series G
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 190 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 540mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376922-G2003A
Ultra Librarian 3D Model Ultra Librarian G2003A CAD Model

Description

The G2003A is an N-Channel MOSFET transistor manufactured by Goford Semiconductor.

  • FET Type: MOSFET N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 190V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
  • Gate Charge (Qg) @ Vgs: 12nC @ 10V
  • Vgs (Max): ±20V
  • Power - Max: 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2009 $50.2250
610+ $0.1648 $100.5280
940+ $0.1597 $150.1180
1,295+ $0.1545 $200.0775
1,675+ $0.1494 $250.2450
2,245+ $0.1339 $300.6055
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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