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Same model may have multiple batches, images only for reference.
HGT1S12N60C3 Harris Corporation
Same model may have multiple batches, images only for reference.

HGT1S12N60C3

Part No HGT1S12N60C3
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 27A, 600V, UFS N-CHANNEL IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 24 A
Current - Collector Pulsed (Icm) 96 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 12A
Power - Max 104 W
Input Type Standard
Gate Charge 62 nC
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Standard Package 195 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 597653-HGT1S12N60C3
Ultra Librarian 3D Model Ultra Librarian HGT1S12N60C3 CAD Model

Description

The 597653-HGT1S12N60C3 is a single IGBT used in discrete semiconductor products.

  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Maximum Power Rating: 104W
  • IGBT Type: Unspecified
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 24A
  • Gate Charge: 62nC
  • Mounting Type: Through-hole
  • Supplier Device Package: I2PAK (TO-262)
  • Operating Temperature Range: -40°C to 150°C
  • ECCN: EAR99
  • Manufacturer: Harris Corporation
  • Market Status: Active
  • MSL Level: 1 (unlimited moisture sensitivity)
  • REACH Status: Vendor undefined
  • HTSUS Code: 8541.29.0095

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