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Same model may have multiple batches, images only for reference.
HGTD7N60C3S Harris Corporation
Same model may have multiple batches, images only for reference.

HGTD7N60C3S

Part No HGTD7N60C3S
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 600 V, 14 A, N-CHANNEL IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 14 A
Current - Collector Pulsed (Icm) 56 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 7A
Power - Max 60 W
Input Type Standard
Gate Charge 23 nC
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA
Standard Package 33 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 597662-HGTD7N60C3S
Ultra Librarian 3D Model Ultra Librarian HGTD7N60C3S CAD Model

Description

The HGTD7N60C3S is a single IGBT (Insulated Gate Bipolar Transistor) used in discrete semiconductor products and is part of the HGTD7N60C3S series from Harris Corporation.

  • Maximum Power: 60W
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 14A
  • Maximum Collector Pulsed Current: 56A
  • Vce(on) @ Vge=15V and Ic=7A: 2V
  • Mounting Type: Surface mountable
  • Package: TO-252-3
  • Operating Temperature Range: -40°C to 150°C
  • Product Status: Active

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