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Same model may have multiple batches, images only for reference.
HUF75309D3 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUF75309D3

Part No HUF75309D3
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Rds On (Max) @ Id, Vgs 70mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 975 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 599737-HUF75309D3
Ultra Librarian 3D Model Ultra Librarian HUF75309D3 CAD Model

Description

The 599737-HUF75309D3 is a N-Channel MOSFET transistor designed for discrete semiconductor applications.

  • Drain-Source Voltage: 55V
  • Continuous Drain Current: 17A
  • On-Resistance @ 17A, 10V: 70mOhm
  • Mounting: Through-Hole
  • Package: TO-251-3
  • Gate Charge @ 20V: 24nC
  • Input Capacitance @ 25V: 350pF
  • Manufacturer: Harris Corporation
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5167 $59.4205
275+ $0.4240 $116.6000
425+ $0.4107 $174.5475
585+ $0.3975 $232.5375
755+ $0.3843 $290.1465
1,010+ $0.3444 $347.8440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,030 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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