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TPC8028(T2LMDK)

Part No TPC8028(T2LMDK)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description lithium-ion secondary battery Notebook PC Portable electronic equipment
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 219734-TPC8028(T2LMDK)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8028(T2LMDK) CAD Model

Description

The TPC8028(T2LMDK) is an N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for use in a variety of power management and switching applications where efficiency and compact size are important. The device utilizes Toshiba's advanced trench MOSFET process to minimize on-resistance and gate charge, resulting in reduced power losses and improved switching performance.

Applications

  • DC-DC converters in portable devices
  • Load switching
  • Power management systems
  • Motor control circuits
  • LED backlight drivers

Features

  • Low On-Resistance (R<sub>DS(on)): Reduces conduction losses and improves efficiency.
  • Fast Switching Speed: Minimizes switching losses, enabling higher frequency operation.
  • Small Surface Mount Package: Allows for high-density circuit designs.
  • Avalanche Capability: Enhances ruggedness and reliability in inductive switching applications.
  • Pb-free and RoHS Compliant: Meets environmental standards.

Benefits

  • Increased Efficiency: Low R<sub>DS(on) and fast switching speed contribute to higher overall system efficiency.
  • Reduced Power Dissipation: Minimizes heat generation, simplifying thermal management.
  • Compact Solution: The small package size enables smaller and lighter electronic devices.
  • Improved Reliability: Avalanche capability provides added protection against voltage transients.
  • Environmentally Friendly: Complies with environmental regulations.

Additional Details

The TPC8028(T2LMDK) typically features a drain-source voltage (V<sub>DSS) rating of 30V and a continuous drain current (I<sub>D) rating that can vary depending on the specific package and operating conditions, but is typically around 6A. The gate-source voltage (V<sub>GS) is typically rated at ±20V. The on-resistance (R<sub>DS(on)) is typically in the range of 20 mΩ at V<sub>GS = 10V. It's crucial to consult the official Toshiba datasheet for the exact specifications, thermal characteristics, and recommended operating conditions for the T2LMDK variant. The device is commonly supplied in a small surface-mount package suitable for automated assembly.

Proper thermal management is important for reliable operation, especially at higher currents. Designers should ensure adequate heat sinking and PCB layout to minimize the junction temperature of the MOSFET. The datasheet provides detailed information on thermal resistance and power dissipation limits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2853 $58.4865
495+ $0.2345 $116.0775
765+ $0.2275 $174.0375
1,055+ $0.2195 $231.5725
1,360+ $0.2125 $289.0000
1,820+ $0.1906 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,220 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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