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IRF244

Name: IRF244
Brand: Harris Corporation
SKU: 1382322
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IRF244
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET / N-Channel 250 V 8.8A (Tc) 125W (Tc) Through Hole TO-3
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr	Harris Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	280mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3
Package / Case	TO-204AA, TO-3
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	94 pcs
Win Source Part Number	1382322-IRF244
Ultra Librarian 3D Model	Ultra Librarian IRF244 CAD Model

Alternative Products

Description

The IRF244 is a single N-channel MOSFET transistor in a TO-204AA, TO-3 package. It is a bulk packaged transistor manufactured by Harris Corporation.

Power Dissipation: 125W
Drain-to-Source Voltage: 250V
Continuous Drain Current (25°C): 8.8A
On-State Resistance: 280mOhm @ 8A and 10V gate-source voltage
Gate Threshold Voltage: 4V @ 250μA drain current
Gate Charge: 59nC @ 10V gate-source voltage
Input Capacitance: 1300pF @ 25V drain-source voltage
Mounting Type: Through-Hole
Product Status: Obsolete
RoHS Compliant: No
Moisture Sensitivity Level: 1 (unlimited exposure time)

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