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Same model may have multiple batches, images only for reference.
IRFR222 Real Image
Same model may have multiple batches, images only for reference.

IRFR222

Part No IRFR222
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 701 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875166-IRFR222
Ultra Librarian 3D Model Ultra Librarian IRFR222 CAD Model

Description

The 875166-IRFR222 is an N-channel MOSFET transistor designed for discrete semiconductor applications.

  • Drain-to-Source Voltage: 200V
  • Continuous Drain Current: 3.8A
  • On-Resistance @ 2.4A and 10V: 1.2Ohm
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 150°C
  • Package: TO-252-3 (DPak)
  • Manufacturer: Harris Corporation
  • Availability: Active

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Quantity Unit Price Ext. Price
65+ $0.9528 $61.9320
150+ $0.7819 $117.2850
230+ $0.7574 $174.2020
320+ $0.7330 $234.5600
410+ $0.7085 $290.4850
550+ $0.6353 $349.4150
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Availability: 3,710 pieces
MOQ: 65 pcs
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