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2SC2732E

Part No 2SC2732E
Manufacturer Hitachi, Ltd
Catalog Transistors (BJT) - Single
Description Silicon NPN Epitaxial RF Bipolar Transistor
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Hitachi, Ltd
Win Source Part Number 155433-2SC2732E
Popularity Low
Supply and Demand Status Balance
Family Name 2SC2732
Introduction Date December 16, 1999
Ultra Librarian 3D Model Ultra Librarian 2SC2732E CAD Model

Description

Overview

The 2SC2732E is a high-performance NPN bipolar junction transistor (BJT) commonly used in a variety of electronic circuits. Known for its reliability and efficiency, this component is designed to optimize the performance of amplifiers and switching applications.

Features and Benefits

  • High Current Gain: Offers excellent amplification capabilities making it ideal for audio and RF applications.
  • Low Saturation Voltage: Enhances the efficiency of the circuit by reducing power loss.
  • Durable Construction: Built to withstand harsh environmental conditions ensuring longevity.
  • Compact Package: Facilitates easy integration into diverse electronic systems.

Applications

  • Audio Amplifiers: Enhances sound quality by providing high current gain.
  • Switching Circuits: Suitable for fast switching applications due to its low saturation voltage.
  • Radio Frequency (RF) Amplification: Ideal for boosting RF signals in communication devices.

Additional Details

With a robust design and high-efficiency ratings, the 2SC2732E is perfect for engineers looking for dependable components. Its ability to operate at high frequencies and voltages makes it versatile for both commercial and industrial applications. Whether you’re working on a new electronic project or improving an existing one, integrating the 2SC2732E can significantly enhance performance.

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