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H5AN8G8NCJR-XNC

Part No H5AN8G8NCJR-XNC
Manufacturer Hynix Semiconductor
Catalog DDR
Description DDR4-3200 1Gx8 (8Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 940199-H5AN8G8NCJR-XNC
Series *
Ultra Librarian 3D Model Ultra Librarian H5AN8G8NCJR-XNC CAD Model

Description

The H5AN8G8NCJR-XNC is an 8Gb DDR4 SDRAM component manufactured by Hynix Semiconductor. This DRAM chip is designed for high-performance memory applications requiring significant capacity and speed. Adhering to the DDR4 standard, it offers improvements in data transfer rates, power efficiency, and overall performance when compared to earlier DDR technologies.

Applications

  • High-End Desktop PCs: Serves as main system memory, enabling fast application loading and smooth multitasking.
  • Workstations: Supports demanding workloads in professional workstations used for content creation, engineering, and scientific computing.
  • Server Systems: Provides the memory capacity needed for server applications, virtual machines, and data centers.
  • Gaming PCs: Contributes to high frame rates and reduced loading times in gaming applications.
  • High-Performance Computing (HPC): Used in HPC environments for complex simulations and data analysis.

Features

  • Capacity: 8Gb (Gigabits) providing ample memory for modern applications.
  • DDR4 Technology: Compliant with the DDR4 standard, ensuring high speed and reliability.
  • High Data Transfer Rates: Supports fast data transfer, reducing latency and improving system responsiveness.
  • Low Voltage Operation: Operates at a low voltage (typically 1.2V), minimizing power consumption and heat generation.
  • FBGA Package: Packaged using a fine-pitch ball grid array (FBGA) for optimal signal integrity and ease of assembly.
  • RoHS Compliance: Manufactured according to RoHS standards, limiting the use of hazardous materials.

Benefits

  • Enhanced System Performance: Significantly improves overall system speed and responsiveness, especially in memory-intensive tasks.
  • Increased Multitasking Capability: Enables smooth multitasking and reduces performance bottlenecks when running multiple applications simultaneously.
  • Reduced Power Consumption: Low voltage operation translates to lower power consumption and reduced heat output.
  • Improved Reliability: Designed for stable and reliable operation under demanding conditions.
  • Higher Memory Density: Packs a large amount of memory into a small physical footprint.

Additional Details

The H5AN8G8NCJR-XNC is designed to operate with specific timing parameters and frequencies, as defined by the DDR4 standard and the system's memory controller. It incorporates features such as on-die termination (ODT) to enhance signal integrity and reduce reflections. Detailed specifications, including operating temperature ranges and timing characteristics, can be found in the official Hynix Semiconductor datasheet for this component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.7917 $59.3751
7+ $16.2393 $113.6751
10+ $15.7319 $157.3190
14+ $15.2244 $213.1416
17+ $14.7169 $250.1873
23+ $13.1945 $303.4735
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,644 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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