The IDT71V2546S133BQ is a high-speed, low-power synchronous burst static RAM (SRAM) from Integrated Device Technology (IDT). It is organized as 128K x 32 bits, offering a substantial memory capacity of 4,194,304 bits (4MB). This SRAM is designed for applications demanding rapid data access, featuring an impressive access time of 133 MHz.

Applications

• Networking equipment (routers, switches)
• High-performance computing
• Digital signal processing (DSP)
• Image processing
• Graphics processing units (GPUs)

Features

• High-speed synchronous burst operation
• Fast access time: 133 MHz
• Low power consumption
• Organized as 128K x 32 bits
• 3.3V power supply
• Boundary Scan (JTAG) for testing
• Available in a BQFP (BQF) package

Benefits

• Exceptional system performance due to the high-speed burst access.
• Reduced power consumption, contributing to energy efficiency.
• Large memory capacity for demanding applications.
• Simplified system testing with Boundary Scan (JTAG) support.
• Suitable for high-density board designs due to the BQFP package.

Additional Details

The IDT71V2546S133BQ is engineered for applications requiring high bandwidth and low latency. Its synchronous burst architecture enables efficient data transfers, and its 133 MHz access time ensures rapid data availability. Operating at 3.3V, it helps to reduce power consumption. The inclusion of Boundary Scan (JTAG) facilitates board-level testing and diagnostics. The BQFP package is designed for surface mounting and high-density board layouts.