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AUIRF3808

Part No AUIRF3808
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE HEXFET N CHANNEL
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 140A (Tc)
Rds On (Max) @ Id, Vgs 7mOhm @ 82A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 5310 pF @ 25 V
Power Dissipation (Max) 330W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 151 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567103-AUIRF3808
Ultra Librarian 3D Model Ultra Librarian AUIRF3808 CAD Model

Description

The AUIRF3808 is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies.

  • Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • Package: bulk
  • Standard Package: 151 pieces
  • Series: HEXFET
  • Vdss: 75V
  • Id: 140A @ 25°C
  • Rds On: 7mOhm @ 82A and 10V gate-source voltage (Vgs)
  • Vgs(th): 4V @ 250µA
  • Power Dissipation: 330W @ a case temperature (Tc)
  • Mounting: through-hole
  • Package: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,300 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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