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Same model may have multiple batches, images only for reference.
AUIRFR8401 International Rectifier
Same model may have multiple batches, images only for reference.

AUIRFR8401

Part No AUIRFR8401
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.25mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V
Power Dissipation (Max) 79W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 567160-AUIRFR8401
Ultra Librarian 3D Model Ultra Librarian AUIRFR8401 CAD Model

Description

The AUIRFR8401 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET
  • Category: Discrete Semiconductor Products, Transistors - FETs, MOSFETs
  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 100A @ 25°C
  • Rds On: 4.25mOhm @ 60A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 3.9V @ 50µA
  • Power Dissipation (Max): 79W @ Tc
  • Mounting Type: Surface Mount
  • Package: TO-252-3, DPak

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