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Same model may have multiple batches, images only for reference.
AUIRLR3110Z Real Image
Same model may have multiple batches, images only for reference.

AUIRLR3110Z

Part No AUIRLR3110Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 63A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 48nC @ 4.5V
Max Input Capacitance 3980pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020814-AUIRLR3110Z
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRLR3110Z CAD Model

Description

The Infineon Technologies AUIRLR3110Z is an N-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 42A @ 25°C.

  • Maximum Power Dissipation: 140W @ Tc
  • Maximum Rds On: 14 mOhm @ 38A and 10V
  • Gate-Source Threshold Voltage: 2.5V @ 100μA
  • Maximum Gate Charge: 48nC @ 4.5V
  • Maximum Input Capacitance: 3980pF @ 25V
  • Mounting Technology: SMD (SMT)
  • Package: D-Pak package
  • Suitable for: use in discrete semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1661 $64.9830
65+ $1.7773 $115.5245
105+ $1.7219 $180.7995
140+ $1.6664 $233.2960
180+ $1.6108 $289.9440
240+ $1.4441 $346.5840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,700 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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