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Same model may have multiple batches, images only for reference.
AUIRLU3110Z Real Image
Same model may have multiple batches, images only for reference.

AUIRLU3110Z

Part No AUIRLU3110Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 63A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 48nC @ 4.5V
Max Input Capacitance 3980pF @ 25V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1020823-AUIRLU3110Z
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRLU3110Z CAD Model

Description

The Infineon Technologies MOSFET is a high power N-Channel transistor with a drain-source breakdown voltage of 100V.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Power Dissipation: 140W @ Tc
  • Package: I-Pak
  • Dimension: TO-251-3 Short Leads, IPak, TO-251AA
  • Continuous Drain Current: 42A @ 25°C @ Tc
  • Gate-Source Threshold Voltage: 2.5V @ 100μA
  • Maximum Rds On: 14 mOhm @ Id, Vgs 38A, 10V
  • Suitable for: discrete semiconductor products
  • Popularity: medium
  • Supply and Demand: balanced

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34+ $3.4119 $116.0046
53+ $3.3053 $175.1809
73+ $3.1987 $233.5051
94+ $3.0919 $290.6386
125+ $2.7722 $346.5250
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Availability: 9,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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