The BAR64-02LE4350 is a silicon PIN diode designed for RF applications, specifically for use as a switch or attenuator. Manufactured by Infineon Technologies, this diode features low forward resistance and capacitance, making it suitable for high-frequency applications.

Applications

• RF switches
• RF attenuators
• Voltage variable attenuators (VVAs)
• Limiter circuits
• Phase shifters

Features

• Low forward resistance
• Low capacitance
• High breakdown voltage
• Fast switching speed
• Surface mount package

Benefits

• Improved RF signal performance
• Reduced insertion loss
• Enhanced isolation in RF switches
• Precise attenuation control
• Compact design

Technical Specifications

The BAR64-02LE4350 has a typical forward resistance of 0.9 Ohms and a typical capacitance of 0.3 pF. The breakdown voltage is typically 30V. It is designed for surface mount applications and is available in a small SOT-323 package. The diode operates efficiently over a wide frequency range, typically from 10 MHz to several GHz. The device's fast switching speed makes it suitable for high-speed RF applications. The operating temperature range is typically between -55°C and +150°C.