The BAT17E6327HTSA1 is a Schottky Barrier Diode manufactured by Infineon Technologies. These diodes are designed for high-speed switching and low forward voltage drop applications. The BAT17 series is known for its robust design and reliability in demanding environments.

Applications

• RF mixing and detection
• High-speed switching circuits
• Voltage clamping
• Reverse polarity protection
• Wireless communication devices

Features

• Low forward voltage drop, typically around 0.35V
• Fast switching speed with low capacitance
• Low reverse leakage current
• High surge current capability
• Small surface mount package (SOD323)
• Lead-free terminal finish; RoHS compliant

Benefits

• Improved efficiency in high-frequency circuits due to low forward voltage and fast switching.
• Reduced power dissipation, contributing to energy savings.
• Enhanced system reliability because of the diode’s robust design and surge current capability.
• Simplified circuit design with the small SOD323 package enabling high-density mounting.
• Compliance with environmental regulations due to lead-free and RoHS compliance.

Technical Specifications

The BAT17E6327HTSA1 has a maximum repetitive reverse voltage of 30V and a forward current of 200mA. Its junction temperature range is typically from -55°C to +125°C. The diode exhibits a low forward voltage drop of 0.35V at 10mA and a reverse leakage current of less than 1 μA. The total capacitance is very low, enabling minimal signal distortion and fast switching. The device is packaged in a small SOD323 surface mount package, optimizing board space.

This Schottky diode is commonly used in applications where efficiency and speed are critical, such as in RF detectors, mixers, and high-speed switching circuits. Its robust design and compliance with industry standards make it a reliable choice for various electronic designs.