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Same model may have multiple batches, images only for reference.
BC846SE6433BTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BC846SE6433BTMA1

Part No BC846SE6433BTMA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 65V 0.1A SOT363
Datasheet
BC846SE6433BTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 65V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 250mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 1022430-BC846SE6433BTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC846SE6433BTMA1 CAD Model

Description

The Infineon Technologies 439756 transistor is a 2 NPN (Dual) transistor that is designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Maximum Current Collector: 100mA
  • VCEO Maximum: 65V
  • Maximum Power Dissipation: 250mW
  • Typical Gain (hFE) (Min): 200 @ 2mA, 5V
  • Maximum Vce (sat): 600mV @ 5mA, 100mA
  • Package: PG-SOT363-6
  • Mounting Technology: SMD (SMT)
  • Operating Temperature Range: 150°C (TJ)
  • Status: Obsolete (EOL)

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