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BCR112W H6327

Part No BCR112W H6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SOT323-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 20 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 140MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 200852-BCR112W H6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR112W H6327 CAD Model

Description

Overview

The BCR112W H6327 is a digital transistor designed with integrated ten kilohm resistors, facilitating simplified and efficient circuit designs suitable for various applications.

Applications

  • Microcontroller interfacing
  • Signal shaping and conditioning
  • High-speed switching operations
  • Consumer gadget implementations
  • Automation systems

Features

  • Integrated biasing resistors
  • Small footprint package
  • Excellent thermal performance
  • Low operating voltage requirements
  • Lead-free and RoHS compliant

Benefits

  • Easy integration into complex circuits
  • Cost reduction in manufacturing
  • Robust reliability and efficiency
  • Space-efficient for modern circuits

Additional Details

Its ease of use and reliability make the BCR112W H6327 an advantageous component for developers focused on compact and efficient design solutions.

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