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Same model may have multiple batches, images only for reference.
BCR148W H6327 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCR148W H6327

Part No BCR148W H6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SOT323-3
Datasheet
BCR148W H6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 100MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 200881-BCR148W H6327
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BCR148W H6327 CAD Model

Description

BCR148W H6327

The BCR148W H6327 is a high-performance bipolar transistor designed for use in electronic circuits requiring precise power control and amplification. This component is engineered to deliver reliable performance in various applications, thanks to its robust build and efficiency.

  • Applications:
    • Switching power supply circuits
    • Signal amplification stages
    • Relay drive circuits
  • Features and Benefits:
    • High gain bandwidth product
    • Low collector-emitter saturation voltage
    • High efficiency and reliability
  • Additional Details:
    • Package: TO-236
    • Polarity: NPN
    • Collector-Emitter Voltage: 60V

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