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BCR503E6393HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BCR503E6393HTSA1

Part No BCR503E6393HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP SOT23
Datasheet
BCR503E6393HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 40 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 100MHz
Maximum Power Dissipation 330mW
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022732-BCR503E6393HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR503E6393HTSA1 CAD Model

Description

The Infineon Technologies BCR503E6393HTSA1 is an NPN pre-biased transistor designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Maximum Current Collector: 500mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 2.5mA, 50mA
  • Typical Gain (hFE) (Min): 40 @ 50mA, 5V
  • Package: PG-SOT23-3
  • Maximum Power Dissipation: 330mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
510+ $0.1280 $65.2800
1,220+ $0.1061 $129.4420
1,900+ $0.1021 $193.9900
2,600+ $0.0996 $258.9600
3,380+ $0.0958 $323.8040
4,550+ $0.0853 $388.1150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 86,100 pieces
MOQ: 510 pcs
Order Increment : 1 pcs
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