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MUN2113T1

Part No MUN2113T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS BRT PNP 100MA 50V SC-59 / Pre-Biased Bipolar Transistor (BJT)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Base Product Number MUN2113
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 886501-MUN2113T1
Ultra Librarian 3D Model Ultra Librarian MUN2113T1 CAD Model

Description

Product Overview: MUN2113T1 from ON Semiconductor

The MUN2113T1 is a high-performance, PNP bipolar digital transistor from ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is designed for use in interface and driver circuits, and is particularly well-suited for applications requiring high current gain and low saturation voltage.

Key Features

  • Current Gain (hFE): The MUN2113T1 boasts a substantial current gain, ensuring effective amplification in various electronic circuits.
  • Low Saturation Voltage: This transistor exhibits a low V<sub>CE(sat), which minimizes power loss and improves efficiency, making it ideal for battery-operated devices.
  • Surface-Mount Package: The transistor comes in a compact SOT-23 package, which is perfect for use in space-constrained applications and facilitates automated assembly processes.
  • Integrated Bias Resistor: The inclusion of a built-in bias resistor simplifies circuit design and reduces component count, which can lead to cost savings and a more reliable end product.
  • Robust Performance: ON Semiconductor's commitment to quality ensures that the MUN2113T1 operates reliably over a wide range of temperatures and conditions.

Applications

The MUN2113T1 is versatile and can be used in a variety of applications, including:

  • Inverter circuits
  • Signal processing
  • Power management
  • Switching loads
  • Interface between logic and high-power circuits

Technical Specifications

The transistor has a collector-emitter voltage (V<sub>CEO) of 50V and a collector current (I<sub>C) of 100mA, making it suitable for moderate power applications. The integrated resistor has a value of 10 kΩ, which provides the necessary biasing with minimal external components.

Conclusion

ON Semiconductor's MUN2113T1 is an excellent choice for designers looking for a PNP transistor with a built-in bias resistor that offers high performance in a small footprint. Its low saturation voltage, high current gain, and robust construction make it a reliable and efficient component for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
625+ $0.0926 $57.8750
1,520+ $0.0762 $115.8240
2,355+ $0.0737 $173.5635
3,245+ $0.0713 $231.3685
4,190+ $0.0690 $289.1100
5,610+ $0.0618 $346.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,480 pieces
MOQ: 625 pcs
Order Increment : 1 pcs
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