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Same model may have multiple batches, images only for reference.
BCW67B Infineon Technologies
Same model may have multiple batches, images only for reference.

BCW67B

Part No BCW67B
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 0.8A SOT-23
Datasheet
BCW67B Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 160 @ 100mA, 1V
Maximum Power Dissipation 330mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 200937-BCW67B
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCW67B CAD Model

Description

Product Overview

The BCW67B is a precision NPN bipolar junction transistor that offers high reliability in demanding applications. It features improved gain linearity, making it highly suitable for analog and digital circuits.

Features & Benefits

  • Excellent gain linearity for accurate signal processing
  • High-frequency performance ideal for RF applications
  • Durable design for long-term usage
  • Low noise operation, reducing signal interference

Applications

  • Instrumentation amplifiers
  • Oscillator circuits
  • High-speed switching applications
  • RF modules and transceivers

Additional Details: The BCW67B is commonly utilized in commercial electronics due to its high performance and reliability.

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