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BDP949H6327XTSA1 Infineon Technologies BDP949H6327XTSA1 label picture
Same model may have multiple batches, images only for reference.
BDP949H6327XTSA1 Infineon Technologies BDP949H6327XTSA1 label picture
BDP949H6327XTSA1 Infineon Technologies BDP949H6327XTSA1 label picture
Same model may have multiple batches, images only for reference.

BDP949H6327XTSA1

Part No BDP949H6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 3A SOT223
Datasheet
BDP949H6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel package
Transistor Type NPN
Current - Collector (Ic) (Maximum) 3A
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 100 @ 500mA, 1V
Power - Max 5W
Frequency - Transition 100MHz
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package TO-261-4, TO-261AA
Manufacturer Package PG-SOT223-4
Win Source Part Number 769937-BDP949H6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BDP949H6327XTSA1 CAD Model

Description

The BDP949H6327XTSA1 is an NPN transistor manufactured by Infineon Technologies.

  • Package: TO-261-4, TO-261AA
  • Mounting: SMD
  • Current-Collector (Ic): 3A (Maximum)
  • Voltage-Collector Emitter Breakdown: 60V (Maximum)
  • Vce saturation: 500mV (Maximum) @ Ib, Ic 200mA, 2A
  • DC Current Gain (hFE): 100 (Minimum) @ Ic 500mA, 1V
  • Frequency-Transition: 100MHz
  • Power-Max: 5W
  • Supply and Demand Status: Balanced

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285+ $0.5343 $152.2755
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670+ $0.4481 $300.2270
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