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BFR182W E6327

Part No BFR182W E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description Trans RF BJT NPN 12V 0.035A 250mW Automotive 3-Pin SOT-323 T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family RF Transistors(BJT)
Manufacturer Infineon Technologies
Win Source Part Number 235081-BFR182W E6327
Popularity Low
Supply and Demand Status Balance
Family Name BFR182W
Introduction Date December 11, 1996
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BFR182W E6327 CAD Model

Description

Product Overview

The BFR182W E6327 RF silicon transistor is engineered for optimal noise performance and power gain, a premium choice for precision RF applications.

Features and Benefits

  • Low noise for high sensitivity applications
  • Strong power gain for improved performance
  • Compact form factor for integration flexibility
  • Operates effectively across a broad frequency spectrum

Applications/Projects

  • Sensitive RF receiver frontends
  • Telecommunication infrastructure equipment
  • Precision instrumentation
  • Aerospace communication devices

Additional Details

With its balance of sensitivity and power, the BFR182W E6327 is highly suited to advanced RF designs where precision and efficiency are critical.

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Shipping Information

Shipped from HK warehouse
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