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BFS17S H6327

Part No BFS17S H6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS RF NPN 15V 25MA SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 1.4GHz
Noise Figure (dB Typ @ f) 3dB to 5dB @ 800MHz
Maximum Power Dissipation 280mW
Typical Gain (hFE) (Min) 40 @ 2mA, 1V
Maximum Current Collector 25mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 039639-BFS17S H6327
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BFS17S H6327 CAD Model

Description

BFS17S H6327 - SMD Medium Power NPN Transistor

The BFS17S H6327 is a surface-mount medium power NPN transistor, designed to provide efficient solutions for amplification needs in compact applications.

  • Features and Benefits:
    • Medium power handling capabilities.
    • Compact SMD package for space-saving designs.
    • Excellent thermal and electrical characteristics.
  • Applications:
    • Medium power amplification circuits.
    • High-frequency inverter circuits.
    • Power management systems.
  • Additional Details:
    • Maximum Collector Current: 100 mA.
    • Maximum Collector-Emitter Voltage: 45 V.
    • Package Type: SOT-23.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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