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BFS466L6E6327

Part No BFS466L6E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF TWIN NPN TSLP-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 5V, 9V
Frequency - Transition 22GHz, 14GHz
Noise Figure (dB Typ @ f) 1.1dB to 1.4dB @ 1.8GHz to 3GHz
Gain 12dB to 17dB
Maximum Power Dissipation 200mW, 210mW
Typical Gain (hFE) (Min) 90 @ 20mA, 3V / 90 @ 15mA, 3V
Maximum Current Collector 50mA, 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSLP-6
Win Source Part Number 201185-BFS466L6E6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFS466L6E6327 CAD Model

Description

Product Overview

The BFS466L6E6327 is a reliable NPN transistor that excels in switching operations, favored within a broad spectrum of electronic devices requiring high switching speeds and durability.

Features and Benefits

  • Exceptional speed in switching ensures enhanced device performance.
  • Low thermal resistance leads to increased device longevity.
  • Intuitive design for ease of use, fitting snugly within the available circuit space.

Applications

  • Integrated into high-speed digital circuits and non-linear signal processing.
  • Extensively used in automotive electronics for adaptive signaling.
  • Optimal for power management applications within various sectors.

Additional Details

The BFS466L6E6327's streamlined design and performance capabilities make it a critical component in delivering reliable and efficient electronic systems.

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