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NJVMJD127T4G

Part No NJVMJD127T4G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP DARL 100V 8A DPAK  /  Bipolar (BJT) Transistor PNP - Darlington 100 V 8 A 20 W Surface Mount DPAK
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Power - Max 20 W
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number NJVMJD127
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names NJVMJD127T4G-ND,NJVMJD127T4GOSTR,NJVMJD127T4GOSCT,NJVMJD127T4GOSDKR
Standard Package 2,500
Win Source Part Number 968605-NJVMJD127T4G
Ultra Librarian 3D Model Ultra Librarian NJVMJD127T4G CAD Model

Description

The ON Semiconductor NJVMJD127T4G is a high-performance bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile NPN transistor is well-suited for linear and switching applications, offering a balance of good gain and low saturation voltage.

With its robust design, the NJVMJD127T4G can handle a continuous collector current of up to 8 A, making it capable of driving moderate to high current loads. The device operates within a maximum collector-emitter voltage (VCEO) of 100V, which allows it to be used in circuits with higher operating voltages. This feature makes it an ideal choice for power regulation circuits, motor control, and other high-voltage applications.

The NJVMJD127T4G comes in a compact surface-mount DPAK (TO-252) package, which not only saves space on the PCB but also ensures enhanced thermal performance and power handling capability. This packaging is designed for optimal heat dissipation, ensuring reliability and longevity even under stressful conditions.

The device also features a high DC current gain (hFE), which typically ranges from 30 to 240 depending on the collector current. This high gain allows for efficient amplification of signals, making the NJVMJD127T4G suitable for audio amplifiers, signal processing, and other applications requiring signal magnification.

ON Semiconductor has designed the NJVMJD127T4G with an emphasis on quality and reliability. It is constructed to meet stringent standards, ensuring consistent performance and durability. The transistor is also characterized by its low collector-emitter saturation voltage, which minimizes power loss and improves efficiency in switching applications.

In summary, the NJVMJD127T4G from ON Semiconductor is a powerful and reliable NPN transistor that offers a blend of high current handling, high voltage capabilities, and efficient amplification. Its compact form factor and excellent thermal properties make it an excellent choice for designers looking to optimize their power management and signal processing solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6750 $50.6250
185+ $0.5538 $102.4530
280+ $0.5365 $150.2200
390+ $0.5192 $202.4880
500+ $0.5019 $250.9500
670+ $0.4500 $301.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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