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Same model may have multiple batches, images only for reference.
HAT2116H-EL-E Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT2116H-EL-E

Part No HAT2116H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A LFPAK
Datasheet
HAT2116H-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1650pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 15W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 204568-HAT2116H-EL-E
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HAT2116H-EL-E CAD Model

Description

The HAT2116H-EL-E is a MOSFET manufactured by Renesas Electronics America.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 15W (Tc)
  • Category: Discrete Semiconductor Products
  • Mounting: Reel - TR with SMD (SMT) technology
  • Temperature Range: 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 30A (Ta)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On (Id,Vgs): 8.2 mOhm @ 15A, 10V
  • Popularity: Medium
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4204 $58.8560
335+ $0.3453 $115.6755
520+ $0.3350 $174.2000
715+ $0.3234 $231.2310
925+ $0.3130 $289.5250
1,235+ $0.2807 $346.6645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 79,700 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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