The BSB280N15NZ3 G is a CoolMOS™ power MOSFET from Infineon Technologies. This N-channel MOSFET is specifically designed for high-efficiency switching applications, providing excellent performance in terms of on-resistance (RDS(on)) and switching behavior. The CoolMOS™ technology minimizes switching losses, contributing to high energy efficiency. It's suitable for a wide range of power supply and motor control applications.

Applications

• Switched-Mode Power Supplies (SMPS): Used in power supplies for computers, servers, and other electronic devices.
• DC-DC Converters: Employed in voltage regulation and conversion circuits for various applications.
• Motor Control: Suitable for controlling DC motors in industrial and automotive applications.
• Lighting Applications: Found in LED drivers and electronic ballasts for efficient lighting control.
• Renewable Energy Systems: Used in solar inverters and wind turbine converters for power conversion.

Features

• N-Channel Enhancement Mode: Offers easy gate drive and simplified circuit design.
• CoolMOS™ Technology: Minimizes switching losses and enhances efficiency.
• Low On-Resistance (RDS(on)): Reduces conduction losses for improved efficiency.
• Fast Switching Speed: Enables high-frequency operation and minimizes switching losses.
• Integrated Gate Resistor: Simplifies gate drive design and reduces EMI.
• RoHS Compliant: Environmentally friendly and complies with industry standards.

Benefits

• High Efficiency: CoolMOS™ technology and low RDS(on) minimize power losses.
• Reduced Heat Dissipation: Lower power losses result in less heat generation, simplifying thermal management.
• Simplified Design: Integrated gate resistor simplifies gate drive circuit design.
• Reliable Performance: Designed for robust and reliable operation in demanding applications.
• Increased Power Density: Enables higher power density in power supply designs.
• Environmentally Friendly: RoHS compliance minimizes environmental impact.

Additional Details

Typical specifications for the BSB280N15NZ3 G MOSFET include:

• Drain-Source Voltage (VDS): 150V.
• Gate-Source Voltage (VGS): ±20V.
• Continuous Drain Current (ID): 28A (at a specified temperature).
• Pulsed Drain Current (IDM): 84A.
• On-Resistance (RDS(on)): Typically 28 mΩ at VGS = 10V.
• Total Gate Charge (Qg): Typically 15 nC.
• Operating Temperature Range: -55°C to +150°C.
• Package: PG-TSDSON-8.