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BSC016N04LS

Part No BSC016N04LS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1045+
Reference case TDSON-8
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 737440-BSC016N04LS
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC016N04LS CAD Model

Description

The BSC016N04LS is a high-performance OptiMOS™ power MOSFET from Infineon Technologies, designed for synchronous rectification and high-frequency switching applications. This N-channel MOSFET features extremely low on-state resistance (Rds(on)) and optimized switching characteristics, enabling high efficiency and power density in demanding power conversion systems.

Applications:

  • Synchronous Rectification in DC-DC converters
  • High-frequency switching power supplies
  • Motor control applications
  • OR-ing MOSFETs
  • Point-of-Load (POL) converters

Features:

  • Extremely low on-state resistance (Rds(on))
  • Optimized for synchronous rectification
  • Low gate charge (Qg) and gate resistance (Rg)
  • Avalanche rated
  • 100% Avalanche tested
  • Pb-free terminal plating; RoHS compliant

Benefits:

  • Enables very high efficiency and reduced power losses
  • Improved thermal performance
  • Increased power density
  • Simplified thermal management
  • Enhanced system reliability

Additional Details:

The BSC016N04LS has a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of up to 100A (depending on package and thermal conditions). The very low Rds(on) significantly reduces conduction losses, contributing to higher overall efficiency. The optimized switching characteristics minimize switching losses, making it suitable for high-frequency operation. The device is typically available in a leadless SMD package for efficient heat dissipation. The avalanche rating ensures robustness against voltage transients, enhancing system reliability. Its primary use is in synchronous rectification, replacing diodes in power supplies to improve efficiency. It is also used as an OR-ing MOSFET to allow multiple power sources to power a load.

The low gate charge allows for faster switching speeds and reduces the power required to drive the MOSFET. This further contributes to improved efficiency. The avalanche testing guarantees the device's ability to withstand transient voltage spikes, increasing its reliability in harsh operating environments. This part is suited for use in telecommunications, server, and other high-power density applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1391 $64.1730
70+ $1.7556 $122.8920
105+ $1.7013 $178.6365
145+ $1.6459 $238.6555
185+ $1.5916 $294.4460
245+ $1.4264 $349.4680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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