The BSC018NE2LSATMA1 is a high-performance, N-channel power MOSFET from Infineon Technologies, designed for RF applications. It features leading-edge OptiMOS™ technology, ensuring minimal switching and conduction losses. This device is optimized for high-efficiency power conversion and RF amplification in various applications.

Applications

• RF Amplifiers in cellular base stations
• Wireless infrastructure applications
• High-frequency power supplies
• DC-DC converters for telecommunications
• Class-D audio amplifiers

Features

• Optimized for linear mode operation
• Low on-resistance (RDS(on)) of 1.8 mΩ
• High current capability (ID) of 100 A
• Fast switching speed
• Logic level drive
• Robust avalanche rating
• Pb-free and RoHS compliant

Benefits

• Improved efficiency in RF amplifier stages
• Reduced power losses and heat generation
• Higher power density
• Simplified gate drive circuitry
• Enhanced system reliability
• Environmentally friendly

Technical Specifications

The BSC018NE2LSATMA1 boasts a drain-source voltage (VDS) of 25 V and a continuous drain current (ID) of 100 A. Its low gate charge (QG) and fast switching speed contribute to its high efficiency. The device is packaged in a TO-220 package, which offers excellent thermal performance. It is designed for operation in demanding RF environments, providing reliable performance and long-term stability. Its RDS(on) is specified at VGS=10V, ensuring minimal conduction losses even at lower gate voltages. Furthermore, the device’s robust avalanche capability enhances its robustness in applications where inductive loads are present.