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BSC019N02KS

Part No BSC019N02KS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 100A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 350μA
Max Gate Charge 85nC @ 4.5V
Max Input Capacitance 13000pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.8W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 1.95 mOhm @ 50A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 201380-BSC019N02KS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC019N02KS CAD Model

Description

The BSC019N02KS, an N-channel MOSFET, delivers superior performance in power switching operations with enhanced heat management capabilities, ensuring long-term reliability.

Features and Benefits

  • Low on-resistance for lesser energy losses
  • Fast recovery diode integrated for efficiency
  • Improved heat dissipation through innovative chip design
  • Compact footprint supports versatile PCB designs

Applications

  • Electrical power steering systems
  • Switching regulators
  • AC/DC converters
  • Robust audio amplifiers
  • Home automation devices

Tailored for uses where power conservation and thermal performance are crucial.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0547 $61.6410
70+ $1.6863 $118.0410
110+ $1.6332 $179.6520
150+ $1.5812 $237.1800
190+ $1.5281 $290.3390
255+ $1.3698 $349.2990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,130 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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