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BSC026N08NS5ATMA1

Name: BSC026N08NS5ATMA1
Brand: Infineon Technologies
SKU: 439058
Availability: InStock
Rating: 4.91 (48 reviews)

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Part No	BSC026N08NS5ATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 80V 23A 8TDSON
Datasheet	BSC026N08NS5ATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	80V
Continuous Drain Current at 25°C	23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Gate-Source Threshold Voltage	3.8V @ 115μA
Max Gate Charge	92nC @ 10V
Max Input Capacitance	6800pF @ 40V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.5W (Ta), 156W (Tc)
Maximum Rds On at Id,Vgs	2.6 mOhm @ 50A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TDSON-8
Dimension	8-PowerTDFN
Win Source Part Number	1024324-BSC026N08NS5ATMA1
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian BSC026N08NS5ATMA1 CAD Model

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Description

The Infineon Technologies BSC026N08NS5ATMA1 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 80V and a continuous drain current of 23A (Ta) and 100A (Tc) @ 25°C.

Maximum Power Dissipation: 2.5W (Ta) and 156W (Tc)
Package: PG-TDSON-8
Mounting Technology: Surface-mount
Drive Voltage (Rds On): 6V (min), 10V (max)
Gate-Source Threshold Voltage: 3.8V @ 115μA
Maximum Gate Charge: 92nC @ 10V
Maximum Input Capacitance: 6800pF @ 40V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
50+	$1.0066	$50.3300
110+	$0.9429	$103.7190
165+	$0.9110	$150.3150
240+	$0.8473	$203.3520
310+	$0.8155	$252.8050
385+	$0.7836	$301.6860

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 87,010 pieces

MOQ: 50 pcs

Order Increment : 1 pcs

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