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Same model may have multiple batches, images only for reference.
BSC052N03LS Real Image
Same model may have multiple batches, images only for reference.

BSC052N03LS

Part No BSC052N03LS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 17A TDSON-8
Datasheet
BSC052N03LS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 17A (Ta), 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 770pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1000220-BSC052N03LS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC052N03LS CAD Model

Description

The Infineon Technologies 1000220-BSC052N03LS is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Power Dissipation: 2.5W (Ta), 28W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 17A (Ta), 57A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Package: PG-TDSON-8
  • Rds On: 5.2 mOhm @ 30A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4724 $51.9640
260+ $0.3876 $100.7760
400+ $0.3755 $150.2000
555+ $0.3634 $201.6870
715+ $0.3513 $251.1795
955+ $0.3149 $300.7295
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Availability: 10,376 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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