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BSC059N04LSGATMA1

Part No BSC059N04LSGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 73A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 16A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 23μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 3200pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 104324-BSC059N04LSGATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC059N04LSGATMA1 CAD Model

Description

Features and Benefits of BSC059N04LSGATMA1

  • Optimized for lower gate charge
  • High efficiency in switching applications
  • Reliable performance in varied temperatures
  • Compact design for space-saving

Applications and Projects

  • Battery-powered devices
  • Motor drives
  • Inverters
  • Telecommunications equipment

The BSC059N04LSGATMA1 is engineered to deliver lower gate charge, enhancing its efficiency in both portable and fixed electronic devices. This product offers a balance of performance and reliability, suitable for diverse applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4717 $51.8870
230+ $0.4418 $101.6140
355+ $0.4269 $151.5495
505+ $0.3971 $200.5355
655+ $0.3821 $250.2755
820+ $0.3672 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,510 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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