The BSC076N06NS3 is a OptiMOS™ power MOSFET from Infineon Technologies. It's an N-channel MOSFET designed for high-efficiency power conversion and switching applications. The device features low on-state resistance (Rds(on)) and optimized switching characteristics, resulting in reduced power losses and improved system performance compared to earlier generations.

Applications

• Synchronous rectification in switched-mode power supplies (SMPS): Efficiently replaces Schottky diodes in secondary rectification stages.
• DC-DC converters: Used in voltage regulators and other DC-DC conversion circuits for various applications like server and telecom power.
• Motor control: Drives and controls DC motors in applications like power tools and robotics.
• Battery management systems (BMS): Used in protection circuits and switching applications within battery management systems.
• Class D audio amplifiers: Efficient switching in audio amplification.

Features

• Low on-state resistance (Rds(on)): Minimizes conduction losses, increasing efficiency.
• Optimized switching behavior: Reduces switching losses for enhanced efficiency.
• Logic level gate drive: Simplified gate drive circuitry as it can be directly driven by microcontrollers and other logic devices.
• Avalanche rated: Withstands transient voltage spikes, enhancing robustness.
• PG-TDSON-8 package: Compact footprint with excellent thermal performance.

Benefits

• High efficiency: Low Rds(on) and optimized switching behavior contributes to excellent power conversion efficiency.
• Reduced heat dissipation: Lower power losses result in less heat generation, simplifying thermal management.
• Simplified design: Logic level gate drive allows for easier integration.
• Improved reliability: Avalanche rating enhances robustness against voltage transients.
• Compact design: Small PG-TDSON-8 package facilitates high power density designs.

Technical Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 36 A
• On-State Resistance (Rds(on)): 7.6 mΩ (at Vgs = 10 V)
• Gate Threshold Voltage (Vgs(th)): Refer to datasheet
• Total Gate Charge (Qg): Refer to datasheet
• Package: PG-TDSON-8