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BSC109N10NS3G

Part No BSC109N10NS3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOSTM3 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Win Source Part Number 1154701-BSC109N10NS3G
Manufacturer Homepage www.infineon.com
Family Name BSC109N10NS3
Introduction Date March 25, 2010
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC109N10NS3G CAD Model

Description

The BSC109N10NS3G is a high-quality electronic component manufactured by Infineon Technologies, and it is a commonly used part in the industry.

  • Device: MOSFET transistor
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 18A
  • On-Resistance: 250mOhm @ 1A and 10V
  • Gate-Source Voltage: 1V @ 250μA
  • Halogen-Free Compliant: Yes
  • Popularity Rating: High
  • Estimated EOL Date: 2024
  • Supply and Demand Status: Balanced
  • Origin: China and Malaysia

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2780 $51.1200
85+ $1.1971 $101.7535
130+ $1.1567 $150.3710
190+ $1.0758 $204.4020
245+ $1.0353 $253.6485
305+ $0.9949 $303.4445
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,900 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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