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BSC130P03LSGAUMA1

Part No BSC130P03LSGAUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 12A/22.5A TDSON
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number 2000920-BSC130P03LSGAUMA1
Win Source Part Number Cross
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series OptiMOS™
Package Tape & Reel (TR)
Vgs (Max) ±25V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-3
Package / Case 8-PowerVDFN
Ultra Librarian 3D Model Ultra Librarian BSC130P03LSGAUMA1 CAD Model

Description

The BSC130P03LSGAUMA1 is a P-Channel power MOSFET from Infineon Technologies belonging to their OptiMOS™ series. It is designed for applications demanding high efficiency and power density. Its key features include a low on-state resistance (Rds(on)) and optimized switching performance, which contribute to minimizing power losses and enhancing overall system efficiency.

Applications:

  • Load switching
  • Battery Management Systems (BMS)
  • Power management in portable devices
  • Reverse polarity protection
  • DC-DC converters

Features:

  • Low on-state resistance (Rds(on))
  • Optimized for high-frequency switching
  • Low gate charge (Qg)
  • Avalanche rated
  • Logic level driving
  • Pb-free terminal plating; RoHS compliant

Benefits:

  • High efficiency and reduced power losses
  • Improved thermal behavior
  • Higher power density
  • Simplified design due to logic level compatibility
  • Increased system reliability due to avalanche rating

Additional Details:

The BSC130P03LSGAUMA1 features a drain-source voltage (Vds) of -30V and a continuous drain current (Id) that depends on the specific package and operating conditions. The low Rds(on) is critical for minimizing conduction losses, leading to efficiency improvements in power conversion applications. The optimized switching characteristics contribute to reducing switching losses, making it suitable for high-frequency operations. This device is particularly useful in load switching applications due to its low Rds(on) and fast switching capabilities. The MOSFET is often used in battery management systems for protection and control. Its logic-level gate drive allows for easy integration with microcontrollers and other control circuitry. The avalanche rating offers extra protection against voltage transients. Its typical applications are in portable devices, and it is often used for reverse polarity protection in automotive applications.

The low gate charge (Qg) allows for faster switching speeds. Its avalanche rating ensures it can handle voltage spikes. The BSC130P03LSGAUMA1 offers superior performance and reliability, ensuring system robustness. The use of Pb-free terminal plating and RoHS compliance further ensures that the component meets environmental regulatory requirements.

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