The OptiMOS™ MOSFET (Metal Oxide) N-Channel FET, BSC670N25NSFDATMA1, is a high-performance semiconductor device that is ideal for use in various applications such as power management, motor drive, and control.

• Drain to Source Voltage (Vdss): 250 V
• Continuous Drain Current (Id): 24A (Tc) @ 25°C
• Maximum On-Resistance (Rds On): 67mOhm @ 24A, 10V
• Gate Threshold Voltage (Vgs(th)): 4V @ 90μA
• Package: 8-PowerTDFN
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 125 V
• Maximum Vgs: ±20V
• Operating Temperature Range: -55°C ~ 175°C (TJ)