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Same model may have multiple batches, images only for reference.
BSO201SP H Infineon Technologies
Same model may have multiple batches, images only for reference.

BSO201SP H

Part No BSO201SP H
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 12A 8SOIC
Datasheet
BSO201SP H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 88nC @ 4.5V
Max Input Capacitance 9600pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 8 mOhm @ 14.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1024415-BSO201SP H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSO201SP H CAD Model

Description

The Infineon Technologies BSO201SP H is a P-Channel MOSFET transistor that has a maximum power dissipation of 1.6W (Ta) and a drain-source breakdown voltage of 20V.

  • FET Type: P-Channel
  • Power Dissipation - Max: 1.6W (Ta)
  • Voltage - Drain Source Breakdown (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 15V
  • Voltage - Gate Source (Vgs) (Max): ±12V
  • Rds On (Max) @ Id,Vgs: 8 mOhm @ 14.9A, 4.5V
  • Package: PG-DSO-8
  • Case/Package: 8-SOIC (0.154", 3.90mm Width)
  • Component Category: Discrete Semiconductor Products
  • Popularity: Medium

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