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BSS308PE H6327

Part No BSS308PE H6327
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET P-CH 30V 2A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Reel(TR)
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Rds On (Max) @ Id, Vgs 80 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 1V @ 11μA
Gate Charge (Qg) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) @ Vds 500pF @ 15V
Power - Max 500mW
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package TO-236-3, SC-59, SOT-23-3
Manufacturer Device Package PG-SOT23-3
Win Source Part Number 098991-BSS308PE H6327
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSS308PE H6327 CAD Model

Description

Description

The BSS308PE H6327 is a versatile P-channel MOSFET, known for its low on-resistance and quick switching capabilities, making it suitable for a variety of electronic projects that require precise control.

Features and Benefits

  • Low On-Resistance for Power Efficiency
  • Fast Switching for High-Frequency Applications
  • Surface-Mount Device with Small Footprint
  • Robust Against Environmental Stress

Applications

  • Portable Electronics
  • Energy-Efficient Systems
  • Analog Switching Circuits
  • Electronic Control Devices

The BSS308PE H6327 provides an excellent solution for engineers striving to reduce energy consumption and enhance the compactness of their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
585+ $0.0856 $50.0760
1,250+ $0.0802 $100.2500
1,940+ $0.0775 $150.3500
2,780+ $0.0720 $200.1600
3,610+ $0.0693 $250.1730
4,505+ $0.0666 $300.0330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 615,000 pieces
MOQ: 585 pcs
Order Increment : 1 pcs
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