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BSZ088N03LSGATMA1

Name: BSZ088N03LSGATMA1
Brand: Infineon Technologies
SKU: 83530
Availability: InStock
Rating: 5 (605 reviews)

Part No	BSZ088N03LSGATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 40A TSDSON-8
Datasheet	BSZ088N03LSGATMA1 Datasheet
Sample
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Shipping Information

Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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Pricing & Ordering $3.8922

Quantity

Unit Price

Ext. Price

10+

$5.0870

$50.870

24+

$4.1740

$100.176

38+

$4.0440

$153.672

52+

$3.9130

$203.476

67+

$3.7830

$253.461

89+

$3.3920

$301.888

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Availability: 36,000 pieces

MOQ: 10 pcs

Order Increment : 1 pcs

Qty:

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Products specifications

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2.2V @ 250μA
Max Gate Charge	21nC @ 10V
Max Input Capacitance	1700pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.1W (Ta), 35W (Tc)
Maximum Rds On at Id,Vgs	8.8 mOhm @ 20A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TSDSON-8
Dimension	8-PowerTDFN
Win Source Part Number	134809-BSZ088N03LSGATMA1
Popularity	Medium
Fake Threat In the Open Market	58 pct.
Supply and Demand Status	Limited

Description

The BSZ088N03LSGATMA1 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 12A (Ta) or 40A (Tc). It is manufactured by Infineon Technologies and has a medium popularity. The fake threat in the open market is 58 percent, and the supply and demand status is limited. This electronic component has a power dissipation of 2.1W (Ta) or 35W (Tc), and the drive voltage (max Rds On, min Rds On) is 4.5V and 10V. It belongs to the discrete semiconductor products category and has a status of active. The package comes in PG-TSDSON-8, and the dimension is 8-PowerTDFN. The gate-source threshold voltage is 2.2V @ 250μA, and the max gate charge is 21nC @ 10V. The max input capacitance is 1700pF @ 15V, and the maximum gate-source voltage is ±20V. The other part number for this product is SP000100418.