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BSZ130N03MS G

Part No BSZ130N03MS G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A TSDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 1300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 11.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 005239-BSZ130N03MS G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSZ130N03MS G CAD Model

Description

BSZ130N03MS G MOSFET

The BSZ130N03MS G is an advanced power MOSFET optimized for applications requiring low on-resistance and fast switching. This component is ideal for engineers focused on efficiency and reliability.

  • Applications:
    • Automotive electronics
    • Portable devices
    • Load switches
    • DC-AC inverters
  • Features and Benefits:
    • Reduced gate charge for improved efficiency
    • Fast switching speeds for high-performance circuits
    • Thermal stability under variable load conditions
    • Designed to minimize electromagnetic interference (EMI)
  • Additional Details:
    • Vds: 30V
    • Id: 100A
    • Package: SuperSO8

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,587 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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